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连接温度对GH4169合金TLP接头界面组织和性能的影响
发布人：上海艾荔艾金属材料有限公司www.shailiai.com
更新时间：2015-10-21
采用50 μm厚的Ni82CrSiB非晶箔片为中间层，通过瞬时液相扩散连接(TLP)方法实现GH4169合金的连接。研究TLP接头的界面组织结构, 重点分析连接温度对接头界面组织和力学性能的影响规律。
连接温度对GH4169合金TLP接头界面组织和性能的影响Effect of bonding temperature on interfacial microstructure and properties of GH4169 alloy TLP joints
采用50 μm厚的Ni82CrSiB非晶箔片为中间层，通过瞬时液相扩散连接(TLP)方法实现GH4169合金的连接。研究TLP接头的界面组织结构, 重点分析连接温度对接头界面组织和力学性能的影响规律。结果表明：GH4169合金TLP接头由等温凝固区(ISZ)和扩散区(DZ)组成。等温凝固区为单相镍基固溶体，B元素向母材的扩散导致在扩散区内晶界处形成大量的针棒状硼化物。随着连接温度的升高，扩散区厚度逐渐增加，而等温凝固区厚度基本保持不变。当连接温度为1 120 ℃、连接时间为2 h时，接头室温及高温(600 ℃)抗拉强度最高，分别为692和599 MPa，为母材强度的82%和71%。断口分析结果表明：随连接温度的升高，室温拉伸时接头断裂位置由等温凝固区逐渐转向扩散区，而高温拉伸时接头均在等温凝固区发生断裂。
The bonding of GH4169 superalloy was achieved by transient liquid phase (TLP) bonding method using 50 μm-thick Ni82CrSiB amorphous foil as the interlayer. The interfacial microstructure of TLP joint was characterized and the effect of bonding temperature on the interfacial microstructure and joining properties was investigated in details. The results show that the GH4169 TLP joint consists of isothermal solidification zone (ISZ) and diffusion zone (DZ). The ISZ is composed of Ni-based solid solution, and lots of needle-like borides are formed at the grain boundaries in DZ due to the diffusion of element B into GH4169 substrate. With the increase of bonding temperature, the thickness of DZ increases while that of ISZ remains unchanged. The highest tensile strength at room temperature and high temperature reaches 692 and 599 MPa when the joint is bonded at 1 120 ℃ for 2 h, which is about 82% and 71% of the base metal strength, respectively. The fracture analysis results show that the fracture location changes from ISZ to DZ during room temperature tensile test with the increase of bonding temperature. However, when tested at high temperature, the facture always occurs at ISZ.
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